Process principle: Graded sequential grinding, skip grits not allowed; wet grinding throughout; high-purity GC for light-colored marble to avoid yellowing caused by iron impurities Process Green SiC Grit Description Rough Grinding (Leveling, removing deep scratches & pits) 60#, 80#, 120# Fast leveling to eliminate height differences and old deep scratches. Use 60# for heavily damaged
Green Silicon Carbide for Opacifier Application‑SiC Purity Minimum control requirement: SiC ≥98.5% by weight. Preferred specification: SiC ≥99.0% for more stable infrared opacifying performance, especially for high‑temperature working conditions. Key Impurity Limits for Opacifier Grade Item Maximum Limit Risk Description Ferric Oxide (Fe₂O₃) ≤0.15% Causes red spots under high temperature, accelerates oxidation and damages insulation
Black silicon carbide is mainly added into nano‑insulation boards as an infrared opacifier. It addresses the infrared radiation penetration issue of the silica‑based matrix at high temperatures, while additionally improving the high‑temperature resistance and mechanical properties of boards. Core Function: Block High‑Temperature Infrared Radiation The nano‑porous silica matrix is semi‑transparent to mid‑infrared thermal radiation. As
How Particle Size of Green Silicon Carbide Micropowder Affects Grinding Efficiency for Optical Glass
Green Silicon Carbide GC Main Grit Standards Grade designation for green silicon carbide: GC; grits fall into two major categories: grit grains (coarse grit) and micro‑powders (fine micro‑powders) 1. European FEPA Standard (ISO 8486, most common for Europe, Middle‑East, Southeast‑Asia foreign trade) FEPA has two sets: F‑grit / P‑grit. Same grit designations but different particle‑size
β‑Silicon Carbide (β‑SiC) Applications in the Semiconductor Industry β‑SiC, also known as 3C‑SiC, features a cubic zinc‑blende crystal structure and is a metastable phase. It differs from the commercially dominant 4H‑SiC (α‑phase hexagonal) for power devices. It has a bandgap of approx. 2.36 eV, high electron mobility, supports hetero‑epitaxy on silicon wafers, and delivers excellent high‑temperature
