6# Green Silicon Carbide (Green SiC) is a high‑purity, ultra‑hard abrasive material, widely used as a core wear‑resistant auxiliary material in the photovoltaic (PV) industry, mainly for monocrystalline/polycrystalline silicon wafer processing.
1. Basic Properties
Chemical & Physical Parameters
表格
| Item | Standard Value |
|---|---|
| Main Component | SiC ≥ 99.0% |
| Impurities | Fe₂O₃ ≤ 0.40%, Free Carbon ≤ 0.20% |
| Mohs Hardness | 9.4 (second only to diamond & B₄C) |
| Melting Point | 2250°C |
| Max Service Temp | 1900°C |
| Specific Gravity | 3.18–3.25 g/cm³ |
| Particle Size (46#) | 0.355–0.425 mm (JIS/Fepa standard) |
| Crystal Structure | Hexagonal, green crystalline |
Key Advantages for PV
- Ultra‑high hardness & wear resistance: ideal for grinding/cutting hard silicon wafers
- High purity & low contamination: avoids metal ion pollution on wafer surfaces
- Excellent thermal conductivity: fast heat dissipation during processing, prevents wafer cracking
- Chemical inertness: stable in acids/alkalis, no reaction with silicon
2. Production Process
- Raw materials: high‑purity silica sand + petroleum coke + salt (additive)
- High‑temperature smelting in resistance furnace (≈2000°C)
- Crushing, shaping, acid‑base washing, magnetic separation, and precise classification
- Final screening to 46# grit with tight particle distribution
3. Main Applications in Photovoltaic Industry
(1) Silicon Wafer Multi‑wire Sawing
- Used as abrasive in cutting slurry (mixed with cutting fluid + steel wire)
- Efficiently slices ingots into thin wafers (0.15–0.3 mm)
- Ensures flat surface, low warpage, and high yield
(2) Wafer Grinding & Lapping
- Rough grinding of wafer surfaces to remove saw marks
- Pre‑polishing before final chemical mechanical polishing (CMP)
- Controls thickness uniformity and surface roughness (Ra < 10 nm)
(3) Wear‑resistant Components
- Raw material for wear‑resistant coatings on PV processing equipment parts
- Used in grinding wheels, lapping plates, and fixtures for wafer handling
4. Why 46# Grit Is Preferred
- Balanced cutting efficiency & surface quality: coarser than fine powders (faster material removal) but finer than coarse grits (less surface damage)
- Optimal for PV wafer roughing: matches the typical processing requirements of silicon ingot sawing and wafer pre‑grinding
- Good flowability & suspension: stable in slurry, reduces clogging in wire saws
5. Quality Control for PV Grade
- Strict limits on magnetic impurities (≤30 ppm) to avoid wafer contamination
- Tight particle size distribution (PSD) to ensure consistent processing results
- No oversized particles to prevent deep scratches on wafers
6. Comparison with Black Silicon Carbide
表格
| Property | Green SiC 46# | Black SiC |
|---|---|---|
| Purity | Higher (SiC ≥99%) | Lower (SiC ~97–98%) |
| Hardness | Higher (9.4) | Lower (9.1–9.3) |
| Chemical Stability | Better | Good |
| PV Suitability | Ideal (high purity, low contamination) | Not recommended (risk of metal pollution) |
7. Packaging & Storage
- Usually packed in 25 kg/50 kg PP bags or jumbo bags
- Store in dry, ventilated area; avoid moisture and contamination
In summary, 46# Green Silicon Carbide is the industry‑standard abrasive for PV silicon wafer processing due to its unique combination of high hardness, purity, thermal stability, and wear resistance, directly supporting high‑efficiency, high‑quality wafer manufacturing.
Would you like me to help you compare 46# Green SiC with other grit sizes (like 36#, 60#, 80#) for different PV processing steps?
