Application of silicon carbide in the semiconductor field

Application of silicon carbide in the semiconductor field
SiC one-dimensional nanomaterials have more unique excellent properties and wider application prospects due to their own microscopic morphology and crystal structure. They are generally considered to be an important component of the third-generation wide bandgap semiconductor materials.
The third-generation semiconductor materials are wide bandgap semiconductor materials, also known as high-temperature semiconductor materials, mainly including silicon carbide, gallium nitride, aluminum nitride, zinc oxide, diamond, etc. This type of material has the characteristics of wide bandgap width, high thermal conductivity, high breakdown electric field, high radiation resistance, high electron saturation rate, etc., and is suitable for the production of high-temperature, high-frequency, radiation-resistant and high-power devices. With its excellent characteristics, the third-generation semiconductor materials have a very broad application prospect in the future.